Home
SSPM and SIM of ZnO variator
Surface topography (a) exhibits small topographic variations between the grains due to specific polishing. Surface potential on grounded surface (b) shows random potential features induced by surface damage during polishing. Surface potential of forward (c) and reverse (d) interface show that potential drops indeed develop at the grain boundaries. Finally, SIM phase image (e) shows that there is significant phase changes in the vicinity of the grain boundaries. SIM amplitude image (f) shows both amplitude decrease in the grains and at the grain boundaries. This behavior is typical for SIM imaging below voltage resonant frequency of the interface.