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Faculty > Talid R. Sinno Talid R. Sinno
Associate Professor of Chemical and Biomolecular Engineering Director, Chemical and Biomolecular Engineering Graduate Admissions email:
Current Focus of Research Fundamental Atomistic Studies of Solid State Aggregation Phenomena. Our work in this area is concerned with the study of basic mechanisms of diffusion, reaction, and aggregation in complex environments such as external fields and compositional variations. We use multiscale computional techniques to isolate the basic phenomenology of nucleation and growth, which is then used to develop predictive models in systems of technological and scientific interest. Novel Multiscale Simulation Development: Extending the scope of atomic-scale simulations is a critically important goal because these types of simulations are required to fully understand the mechanisms responsible for the formation of many interesting nanoscale phenomena such as quantum dots, precipitate ordering, and mechanical fracture. Our research program in this area has been focused on the development of dual-resolution MD simulations in which only a (variable) fraction of the atoms in the system are fully considered. Systems-Level Modeling of Defect Formation in Silicon (and Silicon-Alloy) Materials Processing: The object of our effort in this area is to develop process scale models for microstructural evolution during the growth and thermochemical processing of silicon (and related materials). In this area of research we collaborate closely with industry to take advantage of the enormous experimental database avaliable for model validation and testing. These models are subsequently used by industry to optimize existing processes and identify new ones. Directed Assembly in Hard and Soft Materials: The ability to spatially order a distribution of self-assembled nano- and micro-sized clusters to a high degree of perfection remains elusive in most systems of technological interest. The aim of this project is to investigate avenues for achieving spatial order in both crystalline atomic and colloidal systems. Both experimental and theoretical approaches are combined through a multi-investigator collaborative effort. Selected Publications: R. A. Brown, D. Maroudas, T. Sinno, Modeling Point Defect Dynamics in the Crystal Growth of Silicon, Journal of Crystal Growth, 137 (1994) 12-25. T. Sinno, Z. K. Jiang, and R. A. Brown, Atomistic Simulation of High-Temperature Point Defect Properties in Crystalline Silicon, Applied Physics Letters, 68 (1996) 3028-3031. T. Sinno and R. A. Brown, Point defect and microdefect dynamics in Czochralski-grown silicon: simulations and analysis of self-consistent models. Diffusion & Defect Data Pt.B: Solid State Phenomena, 57-58, (1997) 343-348. T. Sinno, F. K. von Gottberg, R. A. Brown, Investigation of Point Defect Clusters in Silicon Using Parallel Molecular Dynamics, Journal of Computer-Aided Materials Design, 4 (1997) 29. T. Sinno, R. A. Brown, E. Dornberger, and W. von Ammon, On the Dynamics of the Oxidation-Induced Stacking-Fault Ring in Czockralski Silicon Crystals, Applied Physics Letters, 70 (1997) 2250-2253. T. Sinno, R. A. Brown, E. Dornberger, and W. von Ammon, Point Defect Dynamics and the Oxidation-Induced Stacking-Fault Ring in Czockralski-Grown Silicon Crystals, Journal of the Electrochemical Society 145 (1998) 302-318. T. Sinno, R. A. Brown, Modeling Microdefect Formation in Czochralski Silicon, Journal of the Electrochemical Society, 146 (1999) 2300-2312. T. Sinno, H. Susanto, R. A. Brown, Boron Retarded Self-Interstitial Diffusion in Czochralski Growth of Silicon Crystals and its Role in Oxidation-Induced Stacking-Fault Ring Dynamics, Applied Physics Letters, 75, (1999) 1544-1546. T. Sinno, E. Dornberger, R. A. Brown, W. von Ammon, and F. Dupret, Modeling and Simulation for Defect Engineering of CZ-grown Silicon Crystals, Materials Science & Engineering Reports R28 (2000) 149-198. Z. Wang, T. Sinno, R. A. Brown, Enhanced Oxygen Precipitation in Silicon Due to Grown-In Spatial Inhomogenieties in the Oxygen Distribution, Applied Physics Letters 78 (2001) 180-182. E. Dornberger, W. von Ammon, J. Virbulis, B. Hanna B, and T. Sinno, Modeling of transient point defect dynamics in Czochralski silicon crystals, Journal of Crystal Growth, 230 (2001) 291-299. M. Prasad and T. Sinno, An Atomistic to Continuum Description of Vacancy Cluster Properties in Crystalline Silicon, Applied Physics Letters, 80 (2002) 1951-1953. M. Prasad and T. Sinno, An Internally Consistent Approach for Modeling Solid-State Aggregation: I. Atomistic Calculations of Vacancy Clustering in Silicon, Physical Review B 68 (2003) 45206 1-12. M. Prasad and T. Sinno, An Internally Consistent Approach for Modeling Solid-State Aggregation: II. Mean-field Representations of Atomistic Processes, Physical Review B 68 (2003) 45207 1-13. T. Frewen, T. Sinno, E. Dornberger, R. Hoelzl, W. von Ammon, and H. Bracht, Parameterization of Transient Defect Dynamics Models in Czochralski Silicon Crystal Growth, Journal of the Electrochemical Society, 150 (2003) G673-G682. T. Sinno and M. Prasad, Internally Consistent Verification of Mean-Field Models of Aggregation using Large-Scale Molecular Dynamics, Molecular Physics, 102 (2004) 395-403. S. Kapur, M. Prasad, and T. Sinno, Carbon-Mediated Aggregation of Self-Interstitials in Silicon, Physical Review B, 69 (2004) 155214 1-8. T. A. Frewen, T. Sinno, W. Haeckl, and W. von Ammon, A Systems-Based Approach for Generating Quantitative Models of Microstructural Evolution in Silicon Materials Processing, in press: Computers and Chemical Engineering. M. Prasad and T. Sinno, Feature-Activated Molecular Dynamics: An Efficient Approach for Atomistic Simulation of Solid-State Aggregation Phenomena, Journal of Chemical Physics, 121 (2004) 8699-8710. Selected to be included in the Virtual Journal of Biological Physics Research, 8 (2004).
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