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William R. Graham
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D. Phil., Physics, Oxford University, 1965.
M.S., Physics, Melbourne University, 1961.
B.S., Physics, Melbourne University, 1959.
Research Interests
Geometric, electronic, and vibrational structure and properties of surfaces and thin film interface systems; medium energy ion scattering, low energy electron diffraction, Auger electron spectroscopy, molecular beam epitaxy, ultra high vacuum thin film growth and characterization techniques.
Current Research Projects
Current projects are aimed at understanding the structure and properties of metal semiconductor interface systems. This work includes the study of alkali metal adsorption on single crystal semiconductor substrates and comprehensive growth studies of epitaxial metal/Si systems from submonolayer through to diode structures. The overall theme of these studies is directed at the establishment of correlations between the microscopic and macroscopic properties of metal semiconductor interface systems, with specific attention to understanding the Schottky barrier height.
Selected Publications
W. B. Sherman, R. Banerjee, N. J. DiNardo, W. R. Graham, "Absolute Coverage Measurements of Cesium on the Si (100) - 2 x 1 Surface," Phys. Rev. B. accepted for publication (2000)
"RBS Studies of Absolute Coverage of Cs on Si (111) - 7 x 7 Surface" Phys. Rev. B submitted for publication (2000)
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