Si-SiO2 was developing technique to measure capacitance with 5-10 nanometer resolution.
Si-SiO2 is 2nd capacitance measurement. Bare (111)Si-H demonstrates greater capacitance than 100nm thick SiO2 on silicon. Increased frequency shift (measured in Hz) indicates a stronger capacitive field between conductive AFM tip and the sample.
results -- control tissue was soft, untreated infarcted were stiff, and treating the infarcted tissue reduced stiffness.