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Single Molecule Circuits
Electronic transport in single-wall carbon nanotubes (SWNT) is studied using a combination of SPM techniques. Scanning Gate Microscopy (SGM) is used to image and quantify individual defects along the length of the nanotube. The tip bias dependence of defect size is used to quantify the Fermi level of the individual defect. The number of characteristic features in SIM image is indicative of the number of defects active at a given tip bias, from which the local electronic structure of the individual defect can be deduced.
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The movie below shows the contrast due to defects "popping in" as they become active.
