*UNIVERSITY
of PENNSYLVANIA*

**DEPARTMENT OF ELECTRICAL ENGINEERING**

### SPICE MODEL PARAMETERS OF MOSFETS

**Name Model Parameters Units Default
**

LEVEL Model type (1, 2, or 3) 1
L Channel length meters DEFL
W Channel width meters DEFW
LD Lateral diffusion length meters 0
WD Lateral diffusion width meters 0
VTO Zero-bias threshold voltage Volts 0
KP Transconductance Amps/Volts2 2E-5
GAMMA Bulk threshold parameter Volts1/2 0
PHI Surface potential Volts 0.6
LAMBDA Channel-length modulation Volts-1 0
(LEVEL = 1or 2)
RD Drain ohmic resistance Ohms 0
RS Source ohmic resistance Ohms 0
RG Gate ohmic resistance Ohms 0
RB Bulk ohmic resistance Ohms 0
RDS Drain-source shunt resistance Ohms [[infinity]]
RSH Drain-source diffusion sheet Ohms/square 0
resistance
IS Bulk p-n saturation current Amps 1E-14
JS Bulk p-n saturation/current area Amps/meters2 0
PB Bulk p-n potential Volts 0.8
CBD Bulk-drain zero-bias p-n Farads 0
capacitance
CBS Bulk-source zero-bias p-n Farads 0
capacitance
CJ Bulk p-n zero-bias bottom Farads/meters2 0
capacitance/length
CJSW Bulk p-n zero-bias perimeter Farads/meters 0
capacitance/length
MJ Bulk p-n bottom grading 0.5
coefficient
MJSW Bulk p-n sidewall grading 0.33
coefficient
FC Bulk p-n forward-bias 0.5
capacitance coefficient
CGSO Gate-source overlap Farads/meters 0
capacitance/channel width
CGDO Gate-drain overlap Farads/meters 0
capacitance/channel width
CGBO Gate-bulk overlap Farads/meters 0
capacitance/channel width
NSUB Substate doping density 1/centimeter3 0
NSS Surface-state density 1/centimeter2 0
NFS Fast surface-state density 1/centimeter2 0
TOX Oxide thickness meters [[infinity]]
TPG Gate material type: + 1 = + 1
opposite of substrate, - 1 =
same as substrate, 0 =
aluminum
XJ Metallurgical junction depth meters 0
UCRIT Mobility degradation critical Volts/centimete 1E4
field (LEVEL = 2) r
UEXP Mobility degradation exponent 0
(LEVEL = 2)
UTRA (Not Used) mobility degradation
transverse field coefficient
VMAX Maximum drift velocity meters/seconds 0
NEFF Channel charge coefficient 1
(LEVEL = 2)
XQC Fraction of channel charge 1
attributed to drain
DELTA Width effect on threshold 0
THETA Mobility modulation (LEVEL = 3) Volts-1 0
ETA Static feedback (LEVEL = 3) 0
KAPPA Saturation field factor 0.2
(LEVEL=3)
KF Flicker noise coefficient 0
AF Flicker noise exponent 1

Back to Spice Guide - MOSFET element
and model statements

Created by Jan Van der Spiegel (jan@ee.upenn.edu); Oct. 16, 1995; Updated
Sept. 4, 1997
URL: http://www.seas.upenn.edu/~jan/spice/spice.MOSparamlist.html