PECVD

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The PECVD tool is a load-locked Plasmalab 100 and can be used to deposit silicon oxide, silicon nitride, and amorphous silicon at 250 to 350 ºC.

 

Note:

  1. Size of the substrate: 4" diameter or smaller. If the substrate is smaller than 3" diameter, use the 4" carrier wafer.
  2. No adhesives.
  3. No photoresist.
  4. No securing of the substrate(s) using glass slides on the 4" carrier wafer.
  5. The substrate thickness on the carrier wafer must be less than 1 mm because of the 3 " diameter depression depth for the substrate in the 4" carrier wafer.
  6. Some metals are NOT allowed: