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Xenon Difluoride (XeF2) isotropic silicon etching is particularly well suited for MEMS applications. XeF2 vapor phase etching exhibits nearly infinite selectivity of silicon to photo-resist, silicon dioxide, silicon nitride and aluminum. Being a vapor phase etchant, XeF2 avoids many of the problems typically associated with wet processes. K. Pister discusses the use of xenon difluoride, as an etchant for MEMS applications, in part in US patent number 5,726,480.
1. General Silicon etching
2. Fluorinating graphene to change it’s electrical properties
3. Pinhole check for thin films (mostly ALD films)
4. Enhancement for SEM thin film thickness measurements