Hi, I am Yang Lu. I came from the "Spring City", Jinan in China. I miss this city every moment not only because I spent my whole child life there but also because I met the angel of my life in a beautiful summer of Jinan.
I came to EECS department of Peking University in 2008 and earned my bachelor degree of science in Microelectronics 4 years later.
In 2010, I joined the novel device group supervised by Professor Jinfeng Kang and started my research on the Resistive Random Access Memory (RRAM). I investigated about physical mechanisms and degradation behaviors of RRAM based on transition metal oxide and developed a simplified model for switching process. My undergraduate thesis was elected as the "Top Ten Undergraduate Thesis" in my department among 300 works.
I am currently a third year Ph.D. student in Materials Science and Engineering in Penn and continue my exciting journey on RRAM, yet with a totally different material system. I am very confident in my ability to handle the difference between materials science and electrical engineering; and I always enjoy learning knowledge from various aspects in different fields.