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[1]     Yang, X., Lu, Y., Lee, J. H., & Chen, I-Wei. (2016) "Tuning resitance state by thickness control in an electroforming-free nanometallic complementary resistsance access memory", Applied Physics Letters, 108(1), 013506. DOI: 10.1063/1.499443.

[2]    Lu, Y., Lee, J. H., & Chen, I-Wei. (2015) "Nanofilament dynamics in resitsance memory: model and validation", ACS Nano, 9(7), 7649-7660. DOI: 10.1021/acsnano.5b0032.

[3]         Lu, Y., Gao, B., Fu, Y. H., Chen, B., Liu, L. F., Liu, X. Y., & Kang, J. F. (2012) "A simplified model for resistive switching of oxide-based resistive random access memory services", Electron Device Letters, IEEE, 33(3), 306-308.  DOI: 10.1109/LED.2011.2178229.

Journal Articles

 

[1]        Lu, Y., Yang, X., & Chen, I-Wei. "A serial load circuit model for low resistance state in resistance switching memory",  13th Non-Volatile Memory Technology Symposium (NVMTS), August 2013, Minneapolis, MN

 

[2]        Huang, P., Liu, X. Y., Li, W. H., Deng, Y. X., Chen, B., Lu, Y., et al. (2012, December) "A physically based analytic model of RRAM operation for circuit simulation", Electron Devices Meeting (IEDM), 2012 IEEE International (pp. 26-6), December 9-12, San Francisco, CA.

 

[3]         Lu, Y., Chen, B., Gao, B., Fang, Z., Fu, Y. H., Yang, J. Q., et al. "Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect", IEEE International Reliability Physics Symposium (IRPS), April 2012, Anaheim, CA

 

[4]        Chen, B., Lu, Y., Gao, B., Fu, Y. H., Zhang, F. F., Huang, P., et al. (2011, December) "Physical mechanisms of endurance degradation in TMO-RRAM", Electron Devices Meeting (IEDM), 2011 IEEE International (pp. 12-3), December, Washington, D.C.

 

 

 

 

 

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